Nature

A modelling study of hole transport in GaN/AlGaN superlattices

The transport of holes through p-doped wurtzite bulk GaN and AlGaN is poor so transport of holes through GaN/AlGaN superlattices has been proposed and investigated theoretically and experimentally ...
Nature

Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs

Gallium nitride high electron mobility transistors (GaN HEMTs) are attractive due to two-dimensional electron gas (2DEG), large breakdown E-field, and the wide bandgap. Recently, thanks for the ...