Researchers at The University of Osaka have developed a novel technique to enhance the performance and reliability of silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices, a key component in ...
Researchers at École Polytechnique Fédérale de Lausanne (EPFL) and Center Suisse d’Electronique et de Microtechnique (CSEM) in Switzerland developed a novel single-step thermal annealing process for ...
$$\begin{aligned} \sigma _i(t+1) = \textrm{sgn}\Bigl (r_i(t) + \textrm{tanh}\bigl (I_i(t+1)\bigr )\Bigr ), \end{aligned}$$ Simulated annealing that utilizes p-bits ...
Cold-rolled sheet, having a thickness of less than 4 mm, is obtained from a hot-rolled steel strip made of ordinary carbon structural steel. The surface quality of the cold-rolled sheet is good, and ...
Rosatom announced yesterday it has extended the service life of unit 1 of its Balakovo nuclear power plant in the Saratov region of Russia by using thermal annealing on the VVER-1000's reactor ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
The D-Wave quantum annealer isn’t a general-purpose computer, in that it can only solve a set of problems that can be structured as energy minimizations. And even on those problems, D-Wave employees ...
As structures made of metal get smaller - as their dimensions approach the micrometer scale (millionths of a meter) or less - they get stronger. Scientists discovered this phenomenon 50 years ago ...
A simple heat treatment has been shown to significantly improve the pressure sensitivity of semiconductor materials used in devices such as cell phones, sensors and energy harvesters. In a new study ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results